TRANSIENT SENSITIVITY COMPUTATION FOR MOSFET CIRCUITS

被引：5

作者：

HOCEVAR, DE

YANG, P

TRICK, TN

EPLER, BD

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1109/T-ED.1985.22251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2165 / 2176

页数：12

共 9 条

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[3] COMPUTATION OF DELAY TIME SENSITIVITIES FOR USE IN TIME DOMAIN OPTIMIZATION [J].

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DIRECTOR, SW .

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[6]

TRICK T, 1977, INTRO CIRCUIT ANAL

[7] COMPUTATION OF CAPACITOR VOLTAGE AND INDUCTOR CURRENT SENSITIVITIES WITH RESPECT TO INITIAL CONDITIONS FOR STEADY-STATE ANALYSIS OF NONLINEAR PERIODIC CIRCUITS [J].

TRICK, TN ;

COLON, FR .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1975, CA22 (05) :391-396

[8]

YANG P, 1983, IEEE J SOLID-ST CIRC, V18, P128

[9]

Zein D. A., 1982, IEEE Circuits and Systems Magazine, V4, p16, 25, DOI 10.1109/MCAS.1982.6323804

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