TUNNELING FROM DISLOCATION CORES IN SILICON SCHOTTKY DIODES

被引：15

作者：

NITECKI, R

POHORYLES, B

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 36卷 / 01期

关键词：

D O I：

10.1007/BF00616462

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：55 / 61

页数：7

共 19 条

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[8]

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[10] EDGE DISLOCATION ENERGY-LEVEL IN SILICON [J].

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