TRANSIENT-RESPONSE OF PHOTOLUMINESCENCE FOR ELECTRIC-FIELD IN A GAAS/AL0.7GA0.3AS SINGLE QUANTUM WELL - EVIDENCE FOR FIELD-INDUCED INCREASE IN CARRIER LIFE TIME

被引：20

作者：

YAMANISHI, M

USAMI, Y

KAN, Y

SUEMUNE, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.L586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L586 / L588

页数：3

共 6 条

[1] ELECTRIC-FIELD INDUCED DECREASE OF PHOTOLUMINESCENCE LIFETIME IN GAAS QUANTUM WELLS [J].

KASH, JA ;

MENDEZ, EE ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :173-175

[2] EFFECT OF AN ELECTRIC-FIELD ON THE LUMINESCENCE OF GAAS QUANTUM WELLS [J].

MENDEZ, EE ;

BASTARD, G ;

CHANG, LL ;

ESAKI, L ;

MORKOC, H ;

FISCHER, R .

PHYSICAL REVIEW B, 1982, 26 (12) :7101-7104

[3] SOME EFFECTS OF A LONGITUDINAL ELECTRIC-FIELD ON THE PHOTO-LUMINESCENCE OF PARA-DOPED GAAS-ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURES [J].

MILLER, RC ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :954-956

[4] SIZE EFFECT MODULATION-LIGHT SOURCES - POSSIBILITY OF LED MODE-OPERATION AT ROOM-TEMPERATURE [J].

YAMANISHI, M ;

YAMAMOTO, H ;

SUEMUNE, I .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :335-337

[5] QUANTUM-MECHANICAL SIZE EFFECT MODULATION-LIGHT SOURCES - A NEW FIELD-EFFECT SEMICONDUCTOR-LASER OR LIGHT-EMITTING DEVICE [J].

YAMANISHI, M ;

SUEMUNE, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01) :L22-L24

[6] QUENCHING OF PHOTOLUMINESCENCE FROM GAAS/ALGAAS SINGLE QUANTUM WELL BY AN ELECTRIC-FIELD AT HIGH-TEMPERATURE [J].

YAMANISHI, M ;

KAN, Y ;

MINAMI, T ;

SUEMUNE, I ;

YAMAMOTO, H ;

USAMI, Y .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) :111-113

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