EPITAXIAL CDTE-FILMS ON GAAS/SI AND GAAS SUBSTRATES

被引：15

作者：

BEAN, RC ^{[1
]}

ZANIO, KR ^{[1
]}

HAY, KA ^{[1
]}

WRIGHT, JM ^{[1
]}

SALLER, EJ ^{[1
]}

FISCHER, R ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574046

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2153 / 2157

页数：5

共 22 条

[1] LOW DEFECT DENSITY CDTE(111)-GAAS(001) HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
BALLINGALL, JM
TAKEI, WJ
FELDMAN, BJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 599 - 601
[2] BALLINGALL JM, 1985 US WORKSH PHYS, P163
[3] THERMAL EXPANSION AND RELATED BONDING PROBLEMS OF SOME III-V COMPOUND SEMICONDUCTORS
BERNSTEIN, L
BEALS, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 122 - &
[4] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
BICKNELL, RN
YANKA, RW
GILES, NC
SCHETZINA, JF
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 313 - 315
[5] THERMAL-EXPANSION MEASUREMENTS ON 4 OPTICAL MATERIALS FROM ROOM-TEMPERATURE TO 10 K
BROWDER, JS
BALLARD, SS
[J]. APPLIED OPTICS, 1972, 11 (04): : 841 - &
[6] LOW TEMPERATURE THERMAL EXPANSION MEASUREMENTS ON OPTICAL MATERIALS
BROWDER, JS
BALLARD, SS
[J]. APPLIED OPTICS, 1969, 8 (04) : 793 - +
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
FAURIE, JP
SIVANANTHAN, S
BOUKERCHE, M
RENO, J
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1307 - 1309
[8] CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE
FEWSTER, PF
WHIFFIN, PAC
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4668 - 4670
[9] HIGH-PERFORMANCE PHOTOVOLTAIC INFRARED DEVICES IN HG1-XCDXTE ON GAAS
GERTNER, ER
SHIN, SH
EDWALL, DD
BUBULAC, LO
LO, DS
TENNANT, WE
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 851 - 853
[10] GROWTH OF CDTE ON GAAS BY ORGANOMETALLIC VAPOR-PHASE HETEROEPITAXY
GHANDHI, SK
TASKAR, NR
BHAT, IB
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 742 - 745

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