DEFECTS PRODUCTION AND INTERACTION IN ION-IMPLANTED DIAMOND

被引：53

作者：

GIPPIUS, AA

VAVILOV, VS

ZAITSEV, AM

ZHAKUPBEKOV, BS

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90247-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：187 / 194

页数：8

共 27 条

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[3]

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[9]

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[10] SOME EFFECTS OF HETEROATOM SIZE AND REACTIVITY ON LOW-ENERGY ION-IMPLANTATION IN DIAMOND, REVEALED BY X-RAY-INDUCED ELECTRON-SPECTROSCOPY AND OXIDATIVE DEPTH PROFILING [J].

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