TRANSPORT PROPERTIES OF GLASS-SILICON HETEROJUNCTIONS

被引：23

作者：

DUNN, B ^{[1
]}

MACKENZIE, JD ^{[1
]}

机构：

[1] UNIV CALIF,SCH ENGN & APPL SCI,LOS ANGELES,CA 90024

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.322737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1010 / 1014

页数：5

相关论文

共 18 条

[1] Adler D., 1971, Critical Reviews in Solid State Sciences, V2, DOI 10.1080/10408437108243545
[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[3] SPACE-CHARGE-LIMITED CURRENTS IN VITREOUS ANTIMONY TRISULFIDE FILMS
BUDINAS, T
MACKUS, P
SMILGA, A
VISCAKAS, J
[J]. PHYSICA STATUS SOLIDI, 1969, 31 (01): : 375 - &
[4] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES
DONNELLY, JP
MILNES, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +
[5] HETEROJUNCTION FORMATION USING AMORPHOUS MATERIALS
DUNN, B
MACKENZIE, JD
CLIFTON, JK
MASI, JV
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 85 - 86
[6] SNO2-SEMI-CONDUCTOR HETEROJUNCTION - ELECTRICAL PROPERTIES OF A PARTICULAR MOS STRUCTURE
FILLARD, JP
MANIFACIER, JC
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (08) : 1012 - +
[7] DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS
HARTKE, JL
[J]. PHYSICAL REVIEW, 1962, 125 (04): : 1177 - &
[8] HELFRICH W, 1968, PHYSICS CHEMISTRY OR, V3, P1
[9] INJECTION CONTROLLED CONDUCTION
HILL, RM
[J]. THIN SOLID FILMS, 1973, 15 (03) : 369 - 391
[10] KOLOMIET.BT, 1970, REV ROUM PHYS, V15, P129