PHOTOELECTRONIC PROPERTIES OF RES2 AND RESE2 SINGLE-CRYSTALS

被引：61

作者：

MARZIK, JV ^{[1
]}

KERSHAW, R ^{[1
]}

DWIGHT, K ^{[1
]}

WOLD, A ^{[1
]}

机构：

[1] BROWN UNIV,DEPT CHEM,PROVIDENCE,RI 02912

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1984年 / 51卷 / 02期

关键词：

D O I：

10.1016/0022-4596(84)90330-X

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

页码：170 / 175

页数：6

共 32 条

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[4] IMPROVEMENT OF ENERGY-CONVERSION EFFICIENCY BY SPECIFIC CHEMICAL TREATMENTS OF NORMAL-MOSE2 AND NORMAL-WSE2 PHOTOANODES
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[5] SEMICONDUCTOR ELECTRODES .31. PHOTOELECTROCHEMISTRY AND PHOTO-VOLTAIC SYSTEMS WITH N-TYPE AND P-TYPE WSE2 IN AQUEOUS-SOLUTION
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[6] ELECTROCHEMICAL SOLAR-CELL BASED ON THE D-BAND SEMICONDUCTOR TUNGSTEN-DISELENIDE
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[J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1978, 82 (12): : 1331 - 1335
[7] PERFORMANCE OF SYNTHETICAL N-MOSE2 IN ELECTROCHEMICAL SOLAR-CELLS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : 2085 - 2086
[8] PHOTOELECTROCHEMICAL REACTIONS AND FORMATION OF INVERSION-LAYERS AT NORMAL-TYPE MOS2-ELECTRODES, MOSE2-ELECTRODES, AND WSE2-ELECTRODES IN APROTIC-SOLVENTS
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[J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (07): : 645 - 653
[9] ANISOTROPIC PHOTOCORROSION OF N-TYPE MOS2, MOSE2, AND WSE2 SINGLE-CRYSTAL SURFACES - THE ROLE OF CLEAVAGE STEPS, LINE AND SCREW DISLOCATIONS
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GERISCHER, H
[J]. SURFACE SCIENCE, 1982, 119 (01) : 46 - 60
[10] THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS
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GERISCHER, H
TRIBUTSCH, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2471 - 2478

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