DETERMINATION OF CARRIER SATURATION VELOCITY IN SHORT-GATE-LENGTH MODULATION-DOPED FETS

[1] Awano Y., 1983, International Electron Devices Meeting 1983. Technical Digest, P617

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] DAS MB, UNPUB IEEE T ELECTRO

[4] DAS MB, UNPUB SOLID STATE EL

[5] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[6] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[7] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[8] Mishra U., 1982, International Electron Devices Meeting. Technical Digest, P594

[9] SUBBANDS AND CHARGE CONTROL IN A TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 307 - 309

[10] ZULEEG R, 1968, IEEE T ELECTRON DEVI, V19, P987

[1] Awano Y., 1983, International Electron Devices Meeting 1983. Technical Digest, P617

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] DAS MB, UNPUB IEEE T ELECTRO

[4] DAS MB, UNPUB SOLID STATE EL

[5] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[6] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[7] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[8] Mishra U., 1982, International Electron Devices Meeting. Technical Digest, P594

[9] SUBBANDS AND CHARGE CONTROL IN A TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 307 - 309

[10] ZULEEG R, 1968, IEEE T ELECTRON DEVI, V19, P987