DETERMINATION OF THE GAP-STATE DISTRIBUTION OF HYDROGENATED AMORPHOUS-SILICON ALLOYS FROM SUB-BAND-GAP ABSORPTION-MEASUREMENTS

被引：19

作者：

PAYSON, JS

GUHA, S

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.1326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1326 / 1329

页数：4

共 10 条

[1]

AMER NM, 1983, APPL PHYS A, V32, P141

[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[3]

GUHA S, 1983, SOL ENERGY MATER, V8, P269

[4] INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2967-2971

[5] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J].

HUANG, CY ;

GUHA, S ;

HUDGENS, SJ .

PHYSICAL REVIEW B, 1983, 27 (12) :7460-7465

[6] DERIVATION OF THE LOW-ENERGY OPTICAL-ABSORPTION SPECTRA OF A-SI-H FROM PHOTOCONDUCTIVITY [J].

MODDEL, G ;

ANDERSON, DA ;

PAUL, W .

PHYSICAL REVIEW B, 1980, 22 (04) :1918-1925

[7]

Mott N. F., 1979, ELECT PROCESSES NONC

[8] INTERPRETATION OF TRANSPORT RESULTS IN AMORPHOUS-SILICON [J].

SPEAR, WE ;

ALLAN, D ;

LECOMBER, P ;

GHAITH, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :357-362

[9] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H [J].

VANECEK, M ;

KOCKA, J ;

STUCHLIK, J ;

KOZISEK, Z ;

STIKA, O ;

TRISKA, A .

SOLAR ENERGY MATERIALS, 1983, 8 (04) :411-423

[10] RECOMBINATION CENTERS IN PHOSPHORUS DOPED HYDROGENATED AMORPHOUS-SILICON [J].

WRONSKI, CR ;

ABELES, B ;

TIEDJE, T ;

CODY, GD .

SOLID STATE COMMUNICATIONS, 1982, 44 (10) :1423-1426

← 1 →