LIGHT-BEAM-INDUCED CURRENT ANALYSIS FOR PREFERENTIALLY DOPED POLYSILICON SOLAR-CELLS

被引:5
作者
RAGAIE, HF
ELGHITANI, HA
机构
关键词
D O I
10.1109/T-ED.1986.22561
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:730 / 734
页数:5
相关论文
共 13 条
[1]  
BOUNAQUISTI AD, 1983, THIN SOLID FILMS, V100, P235
[2]  
COLLIN RE, 1960, FIELD THEORY GUIDED, pCH2
[3]   REDUCTION OF GRAIN-BOUNDARY RECOMBINATION IN POLYCRYSTALLINE SILICON SOLAR-CELLS [J].
DISTEFANO, TH ;
CUOMO, JJ .
APPLIED PHYSICS LETTERS, 1977, 30 (07) :351-353
[4]  
FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, pCH7
[5]  
FARARIS F, 1980, 3RD P EC PHOT SOL EN, P625
[6]   GRAIN-BOUNDARY DIFFUSION OF PHOSPHORUS IN POLYCRYSTALLINE SILICON [J].
HOLLOWAY, PH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :19-22
[7]  
Johnson S. M., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P179
[8]  
LIN HC, 1983, IEEE T ELECTRON DEV, V30, P1271
[9]   EFFECTS OF GRAIN-BOUNDARIES ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON SOLAR-CELLS [J].
NEUGROSCHEL, A ;
MAZER, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :225-236
[10]  
ORR WA, 1980, 3RD P EC PHOT SOL EN, P646