A STUDY OF RESONANT RAMAN-SCATTERING IN GAINAS/AIINAS MULTIPLE QUANTUM-WELLS

被引：5

作者：

JIANG, DS ^{[1
]}

ZHANG, YH ^{[1
]}

ABRAHAM, C ^{[1
]}

SYASSEN, K ^{[1
]}

XIA, JB ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 02期

关键词：

D O I：

10.1016/0749-6036(92)90351-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Resonant Raman scattering is investigated on GaInAs/AlInAs multiple quantum well (MQW) heterostructures, lattice-matched to InP substrates. The resonance is realized at several fixed laser lines by varying the hydrostatic pressure to tune the interband transition energies (in the neighborhood of the AlInAs band gap) into resonance. Our tight-binding calculation of the electronic envelope functions shows that the resonance is related to the optical transitions between electron and hole extended states. The strong resonant enhancement of Raman peaks occurs only for AlInAs LO phonons which are confined in the barrier layers, but not for GaInAs LO phonons, providing direct experimental evidence for the spatial distribution of extended excitons. © 1992.

引用

页码：273 / 277

页数：5

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