LUMINESCENCE FROM ELECTRON-IRRADIATED SAPPHIRE

被引：58

作者：

CAULFIELD, KJ ^{[1
]}

COOPER, R ^{[1
]}

BOAS, JF ^{[1
]}

机构：

[1] AUSTRALIAN RADIAT LABS, YALLAMBIE, VIC 3085, AUSTRALIA

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.47.55

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Point defects have been produced by electron irradiation in single-crystal alpha-Al2O3 from two different sources. Time-resolved luminescence spectroscopy has been used to study emission spectra and atomic-displacement thresholds for the defects. An emission band at 3.8 eV is present in only one of the crystals while a band at 4.2 eV is observed in both crystals. The former is probably due to F+-center emission and the latter possibly arises from an F-center transition. Emission kinetics are consistent with detrapping of electrons from two shallow traps.

引用

页码：55 / 61

页数：7

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