SELECTED-AREA POLISHING FOR PRECISION TEM SAMPLE PREPARATION

被引：4

作者：

LIU, JB

TRACY, BM

GRONSKY, R

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] INTEL CORP,DEPT MAT TECHNOL,SANTA CLARA,CA 95052

来源：

MICROSCOPY RESEARCH AND TECHNIQUE | 1993年 / 26卷 / 02期

关键词：

TEM; TRIPOD POLISHER; DEVICE FAILURE ANALYSIS;

D O I：

10.1002/jemt.1070260209

中图分类号：

R602 [外科病理学、解剖学]; R32 [人体形态学];

学科分类号：

100101 ;

摘要：

A selected area mechanical polishing technique has been developed to improve the precision of cross-sectional TEM sample preparation, based upon the early work of Benedict and colleagues [Benedict et al. (1990) MRS Symp. Proc. Vol. 199, p. 189]. TEM samples were made from a pre-selected section through the middle of a 1 mum wide band of transistors extending laterally for more than 1 mm by precise control over the plane of polish with a corresponding reduction in sample preparation time. To illustrate the application of this technique, a uniformly thin, electron transparent TEM sample of a single, specific, failed transistor is obtained from a 4 mm by 10 device array. (C) 1993 Wiley-Liss, Inc.

引用

页码：162 / 166

页数：5