CRITIQUE OF THE TIGHT-BINDING METHOD - IDEAL VACANCY AND SURFACE-STATES - COMMENT

被引：5

作者：

VERGES, JA ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.1059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1059 / 1060

页数：2

共 10 条

[1]

[Anonymous], 1979, GREENS FUNCTIONS QUA

[2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

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PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[3]

Cloizeaux J. D., 1964, PHYS REV A, V135, pA698

[4] ORTHOGONAL ORBITALS AND GENERALIZED WANNIER FUNCTIONS [J].

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[5]

CLOIZEAUX JD, 1964, PHYS REV A, V135, P685

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PHYSICAL REVIEW B, 1973, 7 (10) :4388-4398

[7] CRITIQUE OF THE TIGHT-BINDING METHOD - IDEAL VACANCY AND SURFACE-STATES [J].

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LAUFER, PM .

PHYSICAL REVIEW B, 1981, 23 (08) :4063-4075

[8] SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES - (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO2 [J].

POLLMANN, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (10) :5524-5544

[9] AB-INITIO SELF-CONSISTENT CALCULATION OF SILICON ELECTRONIC-STRUCTURE BY MEANS OF WANNIER FUNCTIONS [J].

TEJEDOR, C ;

VERGES, JA .

PHYSICAL REVIEW B, 1979, 19 (04) :2283-2290

[10] SELF-CONSISTENT LOCALIZED DESCRIPTION OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS [J].

VERGES, JA ;

TEJEDOR, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03) :499-511

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