DEPENDENCE OF RAMAN FREQUENCIES AND SCATTERING INTENSITIES ON PRESSURE IN GASB, INAS, AND INSB SEMICONDUCTORS

被引：127

作者：

AOKI, K

ANASTASSAKIS, E

CARDONA, M

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.681

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：681 / 687

页数：7

共 30 条

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