MODELING THE TURN-OFF CHARACTERISTICS OF THE BIPOLAR-MOS TRANSISTOR

被引:21
作者
KUO, DS [1 ]
CHOI, JY [1 ]
GIANDOMENICO, D [1 ]
HU, C [1 ]
SAPP, SP [1 ]
SASSAMAN, KA [1 ]
BREGAR, R [1 ]
机构
[1] FAIRCHILD CAMERA & INSTRUMENT,SAN RAFAEL,CA 94903
关键词
D O I
10.1109/EDL.1985.26101
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:211 / 214
页数:4
相关论文
共 9 条
[1]  
Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264
[2]   FAST-SWITCHING INSULATED GATE TRANSISTORS [J].
BALIGA, BJ .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) :452-454
[3]  
COLCLASER RA, 1980, MICROELECTRONICS PRO, P190
[4]  
GAUEN K, 1984, ELECTRONIC DESI 0405, P103
[5]  
Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79
[6]  
GROVE AS, 1967, PHYS TECHNOL S, P208
[7]  
HWANG KY, 1982, THESIS U CALIFORNIA
[8]  
MULLER RS, 1977, DEVICE ELECTRONICS I, P265
[9]   THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J].
RUSSELL, JP ;
GOODMAN, AM ;
GOODMAN, LA ;
NEILSON, JM .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :63-65