HETEROEPITAXIAL GROWTH OF PB1-XCDXS1-YSEY THIN-FILM BY THE HOT-WALL METHOD

Hetero-epitaxial growth of Pb1-xCdxS1-ySey on the substrates of (111) BaF2, (111)CaF2 and (100)PbS was studied by the hot-wall method. Efforts were made to control the compositions (x,y) and conductivity type of the films by changing the growth parameters such as the temperatures of substrate, source and sulfur reservoir. Experiments were performed from binary PbS to quaternary Pb1-xCdxS1-ySey and consequently Pb0.965Cd0.035S0.915Se0.085 films with the desired band-gap and conductivity type were grown on a lattice-matched PbS substrate. This proved a possibility of multilayer growth with a double hetero-structure by the hot-wall method usage in lasers.