LOCATION OF 1/F NOISE SOURCES IN BJTS AND HBJTS .1. THEORY

被引：68

作者：

VANDERZIEL, A ^{[1
]}

ZHANG, X ^{[1
]}

PAWLIKIEWICZ, AH ^{[1
]}

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1371 / 1376

页数：6

共 20 条

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[2]

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[3] 1/F NOISE IS NO SURFACE EFFECT [J].

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[4] 1-F NOISE [J].

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[5] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J].

HSU, ST ;

FITZGERALD, DJ ;

GROVE, AS .

APPLIED PHYSICS LETTERS, 1968, 12 (09) :287-+

[6] PRESENCE OF MOBILITY-FLUCTUATION 1/F NOISE IDENTIFIED IN SILICON P+NP TRANSISTORS [J].

KILMER, J ;

VANDERZIEL, A ;

BOSMAN, G .

SOLID-STATE ELECTRONICS, 1983, 26 (01) :71-74

[7]

KILMER J, 1984, THESIS U FLORIDA GAI

[8]

KILMER J, 1984, SOLID STATE ELECTRON, V28, P287

[9] 1-F NOISE IN P-N DIODES [J].

KLEINPENNING, TGM .

PHYSICA B & C, 1980, 98 (04) :289-299

[10]

PAWLIKIEWICZ A, UNPUB IEEE T ELECTRO

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