VARIABLE-AREA RESONANT TUNNELING DIODES USING IMPLANTED GATES

被引:13
作者
GOODINGS, CJ
CLEAVER, JRA
AHMED, H
机构
[1] Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge CBS OHE, Madingley Road
关键词
TUNNEL DIODES; DIODES; SEMICONDUCTOR DEVICES;
D O I
10.1049/el:19920975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new fabrication technique is reported for variable-area resonant tunnelling diodes in which control is achieved by means of a reverse-biased, implanted pn junction surrounding the device. The characteristics of such devices are shown and interpreted.
引用
收藏
页码:1535 / 1537
页数:3
相关论文
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