THIN-FILM POLYCRYSTALLINE SI SOLAR-CELL ON GLASS SUBSTRATE FABRICATED BY A NOVEL LOW-TEMPERATURE PROCESS

被引：32

作者：

YAMAMOTO, K

NAKASHIMA, A

SUZUKI, T

YOSHIMI, M

NISHIO, H

IZUMINA, M

机构：

[1] Central Research Laboratories, Kaneka Corporation, Yoshida-cho, Hyogo-ku, Kobe, 652

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 12B期

关键词：

POLYCRYSTALLINE SI; SOLAR CELL; EXCIMER LASER ANNEALING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; LOW-TEMPERATURE PROCESS;

D O I：

10.1143/JJAP.33.L1751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron doped laser annealed polycrystalline Si film is as low as 2 x 10(-4) OMEGA.cm. The structure of the solar cell presented here is ITO/n muc-Si:H (30 nm)/p poly-Si (2 mum)/p+ poly-Si (300 nm)/glass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this solar cell estimated from the evaluation of the inverse quantum efficiency is more than or equal to the thickness (2 mum) of the solar cell.

引用

页码：L1751 / L1754

页数：4