HIGH-RELIABILITY SEMICONDUCTOR-LASERS FOR OPTICAL COMMUNICATIONS

[1] RELIABILITY OF SEMICONDUCTOR-LASERS FOR UNDERSEA OPTICAL-TRANSMISSION SYSTEMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2603 - 2608

[2] FACET OXIDATION OF INGAASP/INP AND INGAAS/INP LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (11) : 1692 - 1698

[3] 1.3-MUM LASER RELIABILITY DETERMINATION FOR SUBMARINE CABLE SYSTEMS [J]. AT&T TECHNICAL JOURNAL, 1985, 64 (03): : 771 - 807

[4] Higuchi H., 1983, 9th European Conference on Optical Communication, P39

[5] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4539 - 4540

[6] Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10

[7] STRESS TESTS ON 1.3-MU-M BURIED-HETEROSTRUCTURE LASER DIODE [J]. ELECTRONICS LETTERS, 1983, 19 (08) : 282 - 283

[8] IKEGAMI T, 1983, 4TH INT C INT OPT OP

[9] AGING TESTS OF LOW THRESHOLD CURRENT INGAASP/INP V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3-MU-M WAVELENGTH [J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 583 - 584

[10] ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310

[1] RELIABILITY OF SEMICONDUCTOR-LASERS FOR UNDERSEA OPTICAL-TRANSMISSION SYSTEMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2603 - 2608

[2] FACET OXIDATION OF INGAASP/INP AND INGAAS/INP LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (11) : 1692 - 1698

[3] 1.3-MUM LASER RELIABILITY DETERMINATION FOR SUBMARINE CABLE SYSTEMS [J]. AT&T TECHNICAL JOURNAL, 1985, 64 (03): : 771 - 807

[4] Higuchi H., 1983, 9th European Conference on Optical Communication, P39

[5] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4539 - 4540

[6] Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10

[7] STRESS TESTS ON 1.3-MU-M BURIED-HETEROSTRUCTURE LASER DIODE [J]. ELECTRONICS LETTERS, 1983, 19 (08) : 282 - 283

[8] IKEGAMI T, 1983, 4TH INT C INT OPT OP

[9] AGING TESTS OF LOW THRESHOLD CURRENT INGAASP/INP V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3-MU-M WAVELENGTH [J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 583 - 584

[10] ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310