BIAS-DEPENDENT MICROWAVE CHARACTERISTICS OF ATOMIC PLANAR-DOPED ALGAAS/INGAAS/GAAS DOUBLE HETEROJUNCTION MODFETS

被引：5

作者：

CHEN, YK ^{[1
]}

WANG, GW ^{[1
]}

RADULESCU, DC ^{[1
]}

LEPORE, AN ^{[1
]}

TASKER, PJ ^{[1
]}

EASTMAN, LF ^{[1
]}

STRID, E ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1109/TMTT.1987.1133874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1456 / 1460

页数：5

共 14 条

[1] CAMNITZ LH, 1985, 10TH BIENN IEEE CORN
[2] CHAO PC, 1985, JUL P IEEE CORN C, P163
[3] CHEN YK, 1986, 1986 INT GAAS REL CO
[4] CHEN YK, 1987, 45TH ANN DEV RES C S
[5] CHEN YK, 1987, MAR WOCSEMMAD WORKSH
[6] A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 11 - 17
[7] GUPTA AK, 1985, 1985 P IEEE MICR MIL, P50
[8] HENDERSON T, 1986, APPL PHYS LETT, V16, P1080
[9] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER
HESS, K
MORKOC, H
SHICHIJO, H
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471
[10] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207