MONOLITHICALLY-INTEGRATED HYBRID HETEROSTRUCTURE DIODE-LASER WITH DIELECTRIC-FILM WAVE-GUIDE DBR

In the monolithically integrated hybrid distributed Bragg reflector (MIH DBR) diode laser, the five-layer Ga(Al)As-GaAs heterostructure waveguide of the gain region was monolithically butt-joined on a common GaAs substrate with a highly transparent corrugated dielectric-film waveguide consisting of sputtered SiO//2, Ta//2O//5, and evaporated (corrugated) As//2S//3 layers. The laser operated with a first-order grating under pulsed current pumping at 300 K. Efficient resonant mode conversion (70% in power) was obtained at the interface between the heterostructure and the dielectric waveguides. Fundamental transverse and single-longitudinal mode output emission was obtained up to 160 mW (I//t//h equals 120 mA) with external differential quantum efficiency 32%. The advantages of dielectric-film waveguide DBRs are demonstrated. The use of such DBRs results in a high degree of side-mode suppression and stability of the spectral position of the emission line under temperature variation, the corresponding spectral shift being less than equivalent to 0. 01 angstrom/ degree K.