RESISTIVITY OF THE SOLID-SOLUTIONS (CO-NI)SI2

被引：22

作者：

DHEURLE, FM

TERSOFF, J

FINSTAD, TG

CROS, A

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

[2] FAC SCI LUMINY,DEPT PHYS,CNRS,UA 783,F-13288 MARSEILLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.336858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：177 / 180

页数：4

共 38 条

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[9] ELECTRICAL CHARACTERISTICS OF THIN NI2SI, NISI, AND NISI2 LAYERS GROWN ON SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5678-5681

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