ANALYSIS OF THE CHANGE IN THE CARRIER CONCENTRATION OF SAO(2) THIN-FILM GAS SENSOR

被引：32

作者：

KANAMORI, M ^{[1
]}

SUZUKI, E ^{[1
]}

OHYA, Y ^{[1
]}

TAKAHASHI, Y ^{[1
]}

机构：

[1] GIFU UNIV,FAC ENGN,DEPT CHEM,GIFU 50111,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12A期

关键词：

SNO2 THIN FILM; GAS SENSOR; CARRIER CONCENTRATION; OXYGEN VACANCY; ESR; VAN DER PAUW METHOD; HALL COEFFICIENT;

D O I：

10.1143/JJAP.33.6680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties and the number of unpaired electrons localized in oxygen vacancies of SnO2 thin films were quantitatively analyzed using the van der Pauw method and ESR spectra, respectively, in order to clarify; the source of carrier electrons induced on gas sensing. The concentration of carriers generated was related to the amount of unpaired electrons localized in oxygen vacancies which were produced under the flammable gas atmosphere. No adsorbed oxygen was detected by ESR. From these results it is concluded that most of the carrier electrons were supplied not from adsorbed oxygen on SnO2 surface but from oxygen vacancies of the SnO2 surface layer.

引用

页码：6680 / 6683

页数：4

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