LARGE MAGNETORESISTANCE IN LA-CA-MN-O FILMS

被引:8
作者
CHEN, LH
JIN, S
TIEFEL, TH
RAMESH, R
SCHURIG, D
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] UNIV MARYLAND,COLLEGE PK,MD 20742
[3] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093
关键词
D O I
10.1109/20.489814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A very large magnetoresistance value in excess of 10(6)% has been obtained at 110K, H = 6T in La-Ca-Mn-O thin films epitaxially grown on LaAlO3 substrates by pulsed laser deposition The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than similar to 2000 Angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films.
引用
收藏
页码:3912 / 3914
页数:3
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