CORROSION-RESISTANCE OF AL-PD-SI CONDUCTOR

被引：7

作者：

KOUBUCHI, Y ^{[1
]}

ONUKI, J ^{[1
]}

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 05期

关键词：

D O I：

10.1109/16.108187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Al-Pd-Si alloy conductor was developed which has higher corrosion resistance than Al-Si conductor after resin molding. A palladium oxide-rich (PdO-rich) area was formed by annealing in the surface oxide film on the Al-Pd-Si alloy conductors. It was considered responsible for the increased corrosion resistance of Al-Pd-Si with over 0.3 wt % Pd. © 1990 IEEE

引用

页码：1259 / 1263

页数：5

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