RAMAN-SCATTERING STUDIES IN DILUTE AND CONCENTRATED A-SI1-XHX ALLOYS

被引：15

作者：

MALEY, N ^{[1
]}

LANNIN, JS ^{[1
]}

SCOTT, BA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0022-3093(83)90556-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：201 / 204

页数：4

共 9 条

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[3] STRUCTURAL ORDER IN ANNEAL-STABLE AMORPHOUS-SILICON
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[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2916 - 2919
[4] LANNIN JS, 1982, PHYS REV B, V26, P3506, DOI 10.1103/PhysRevB.26.3506
[5] LANNIN JS, 1983, AMORPHOUS HYDROGENAT
[6] STRUCTURAL ORDER AND OPTICAL-PROPERTIES OF TETRAHEDRAL AMORPHOUS SOLIDS
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[J]. PHYSICA B & C, 1983, 117 (MAR): : 880 - 882
[7] MALEY N, UNPUB
[8] LOW DEFECT DENSITY AMORPHOUS HYDROGENATED SILICON PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION
SCOTT, BA
REIMER, JA
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SIMONYI, EE
REUTER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 973 - 975
[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON
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[J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42