EFFECT OF HEAT-TREATMENT AFTER DEPOSITION ON INTERNAL-STRESS IN MOLYBDENUM FILMS ON SIO2-SI SUBSTRATES

被引：30

作者：

OIKAWA, H

NAKAJIMA, Y

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

[2] HOYA CORP,AKISIMA,TOKYO,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.569348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1153 / 1156

页数：4

共 8 条

[1] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J].

BROWN, DM ;

ENGELER, WE ;

GARFINKEL, M ;

GRAY, PV .

[2] VACUUM DEPOSITED MOLYBDENUM FILMS [J].

HOLMWOOD, RA ;

GLANG, R .

[3] INTRINSIC STRESS IN EVAPORATED METAL FILMS [J].

KLOKHOLM, E ;

BERRY, BS .

MAYADAS, AF ;

SHATZKES, M .

PHYSICAL REVIEW B, 1970, 1 (04) :1382-&

[5]

NAKAJIMA Y, 1974, JPN J APPL PHYS S 1, V2, P575

[6]

NORTHCOTT L, 1956, MOLYBDENUM, P62

[7]

OIKAWA H, 1976, REV ELEC COMMUN LAB, V24, P407

[8]

STONEY G, 1908, P ROY SOC LOND A MAT, V82, P172