EVOLUTION OF THE MOS-TRANSISTOR - FROM CONCEPTION TO VLSI

被引：80

作者：

SAH, CT

机构：

[1] Univ of Florida, Gainesville, FL,, USA

来源：

PROCEEDINGS OF THE IEEE | 1988年 / 76卷 / 10期

关键词：

Manuscript received August 1; 1986; revised July 14; 1988. The research was supported in part by two sequential grants from the U.S. National Science Foundation; three sequential and ongoing contracts with the Semiconductor Research Corporation concerning silicon MOS aging and failure mechanisms as well as reliability physics; chemistry; and modeling; and an unrestricted Intel grant for the author‘s stipend of the summer of 1988;

D O I：

10.1109/5.16328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

260

引用

页码：1280 / 1326

页数：47

共 278 条

[1]

AOKI M, 1988, ISSCC, V31, P250

[2]

ARMSTRONG JA, 1987, SOLID STATE TECH DEC, P81

[3] SEMICONDUCTOR MEMORY TRENDS [J].

ASAI, S .

PROCEEDINGS OF THE IEEE, 1986, 74 (12) :1623-1635

[4] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783

[5]

BAILEY J, 1988, WALL STREET J 1026, P1

[6]

BALK P, 1965, J ELECTROCHEM SOC, V112, pC185

[7] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J].

BALK, P ;

BURKHARD.PJ ;

GREGOR, LV .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2133-&

[8]

BALK P, 1965, ELECTROCHEM SOC SPRI, V0014, P00237

[9]

Balk P., 1965, EXT ABSTR EL DIV, V14, P29

[10]

BAMBRICK R, 1988, ELECTRONIC NEWS, P1

← 1 2 3 4 5 6 7 8 9 10 →