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VERY SHORT GATE-LENGTH GAAS-MESFETS
被引:31
作者
:
PATRICK, W
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
PATRICK, W
[
1
]
MACKIE, WS
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
MACKIE, WS
[
1
]
BEAUMONT, SP
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
BEAUMONT, SP
[
1
]
WILKINSON, CDW
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
WILKINSON, CDW
[
1
]
OXLEY, CH
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
OXLEY, CH
[
1
]
机构
:
[1]
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1985年
/ 6卷
/ 09期
关键词
:
D O I
:
10.1109/EDL.1985.26196
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:471 / 472
页数:2
相关论文
共 5 条
[1]
ALLISON J, 1978, ELECTRONIC ENG MATER, pCH1
[2]
BEAUMONT SP, 1981, P MICROCIRCUIT ENG 8
[3]
BINNIE CE, 1982, P MICROCIRCUIT ENG 8, P44
[4]
GHOSH CL, 1984, IEEE ELECTR DEVICE L, V5, P3, DOI 10.1109/EDL.1984.25809
[5]
PATRICK W, UNPUB
←
1
→
共 5 条
[1]
ALLISON J, 1978, ELECTRONIC ENG MATER, pCH1
[2]
BEAUMONT SP, 1981, P MICROCIRCUIT ENG 8
[3]
BINNIE CE, 1982, P MICROCIRCUIT ENG 8, P44
[4]
GHOSH CL, 1984, IEEE ELECTR DEVICE L, V5, P3, DOI 10.1109/EDL.1984.25809
[5]
PATRICK W, UNPUB
←
1
→