PLASMA ION-IMPLANTATION TECHNOLOGY FOR BROAD INDUSTRIAL APPLICATION

被引:5
作者
DEB, D
SIAMBIS, J
SYMONS, R
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词
D O I
10.1116/1.587354
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The recently invented Plasma Ion Implantation (PH) process (1987) [J R. Conrad, U.S. Patent No. 764394 (August 16, 1988)] is currently under intense industrial engineering investigation and development. A critical component of PII for broad industrial utilization is the availability of an efficient modulator system that applies the high voltage pulse to the workpiece. A modulator technology assessment and selection is carried out. The requirements of the PII process favor the selection of a hard-tube modulator. The PII process favors the application of beam switch tube technology such as the Litton L-5012 and L-5097. These Litton tubes have already been selected by LANL and utilized in their pilot engineering demonstration experiment with GM and the University of Wisconsin. The performance, physical operation, and potential enhancements of the Litton: beam switch tubes L-5012 and L-5097 will be discussed in connection with the requirements of the emerging plasma ion implantation industrial modulator technology.
引用
收藏
页码:828 / 832
页数:5
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