PHOTOCONDUCTIVITY IN P-TYPE INDIUM ANTIMONIDE WITH DEEP ACCEPTOR IMPURITIES

被引：32

作者：

ENGELER, W

LEVINSTEIN, H

STANNARD, C

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(61)90269-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：249 / 254

页数：6

共 7 条

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[2] BORRELLO S, 1961, 1045 SYR U RES I REP
[3] ENGELER W, 1961, PHYS REV LETT, V7
[4] ENGELER W, 1961, B AM PHYS SOC, V6, P156
[5] LATTICE ABSORPTION BANDS IN INDIUM ANTIMONIDE
FRAY, SJ
JOHNSON, FA
JONES, RH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (492): : 939 - 948
[6] DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS
HALL, RN
RACETTE, JH
EHRENREICH, H
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 456 - 458
[7] PHOTOCONDUCTIVITY IN MANGANESE-DOPED GERMANIUM
NEWMAN, R
WOODBURY, HH
TYLER, WW
[J]. PHYSICAL REVIEW, 1956, 102 (03): : 613 - 617