JUNCTION BOUNDARY CONDITIONS FOR HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] ABRUPT VS DIFFUSED SEMICONDUCTOR JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3137 - &

[3] FLETCHER NH, 1957, J ELECTRON, V2, P610

[4] HARRICK MJ, 1958, J APPL PHYS, V29, P764

[5] LINDLEY WT, PRIVATE COMMUNICATIO

[6] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] ABRUPT VS DIFFUSED SEMICONDUCTOR JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3137 - &

[3] FLETCHER NH, 1957, J ELECTRON, V2, P610

[4] HARRICK MJ, 1958, J APPL PHYS, V29, P764

[5] LINDLEY WT, PRIVATE COMMUNICATIO

[6] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132