SOLIDIFICATION KINETICS OF PULSED LASER MELTED SILICON BASED ON THERMODYNAMIC CONSIDERATIONS

被引：43

作者：

GALVIN, GJ ^{[1
]}

MAYER, JW ^{[1
]}

PEERCY, PS ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

关键词：

D O I：

10.1063/1.95514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：644 / 646

页数：3

共 12 条

[1] Baeri P., 1982, LASER ANNEALING SEMI
[2] CRYSTALLIZATION RATES OF A LENNARD-JONES LIQUID
BROUGHTON, JQ
GILMER, GH
JACKSON, KA
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (20) : 1496 - 1500
[3] MOLECULAR MECHANISM OF SOLIDIFICATION
CAHN, JW
HILLIG, WB
SEARS, GW
[J]. ACTA METALLURGICA, 1964, 12 (12): : 1421 - +
[4] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[5] FAN JCC, 1984, ENERGY BEAM SOLID IN
[6] TIME-RESOLVED CONDUCTANCE AND REFLECTANCE MEASUREMENTS OF SILICON DURING PULSED-LASER ANNEALING
GALVIN, GJ
THOMPSON, MO
MAYER, JW
PEERCY, PS
HAMMOND, RB
PAULTER, N
[J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1079 - 1087
[7] JACKSON KA, 1983, SURFACE MODIFICATION, pCH3
[8] SPAEPEN F, 1982, LASER ANNEALING SEMI, pCH2
[9] Thompson M. O., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P57
[10] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION
THOMPSON, MO
GALVIN, GJ
MAYER, JW
PEERCY, PS
POATE, JM
JACOBSON, DC
CULLIS, AG
CHEW, NG
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (26) : 2360 - 2363