STRESS-INDUCED SWITCHING IN VO2 THIN-FILMS

被引：21

作者：

UFERT, KD

机构：

[1] DAWB,ZENT INST FESTKORPERPHYS & WERKSTOFFORSCH,JENA,DEUTSCH DEM REP

[2] INSTITUTSTEIL MAGNET WERKSTOFFE,JENA,DEUTSCH DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 34卷 / 01期

关键词：

D O I：

10.1002/pssa.2210340162

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K83 / K86

页数：4

共 7 条

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[2] PHASE-TRANSITION IN REACTIVELY CO-SPUTTERED FILMS OF VO2-TIO2 [J].

BALBERG, I ;

ABELES, B ;

ARIE, Y .

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[4] HYDROSTATIC-PRESSURE DEPENDENCE OF ELECTRONIC PROPERTIES OF VO2 NEAR SEMICONDUCTOR-METAL TRANSITION TEMPERATURE [J].

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[5]

Guntersdorfer M., 1970, Solid-State Electronics, V13, P355, DOI 10.1016/0038-1101(70)90186-3

[6] ELECTRON LOCALIZATION INDUCED BY UNIAXIAL STRESS IN PURE VO2 [J].

POUGET, JP ;

LAUNOIS, H ;

DHAENENS, JP ;

MERENDA, P ;

RICE, TM .

PHYSICAL REVIEW LETTERS, 1975, 35 (13) :873-875

[7] ORIGIN OF INTERNAL STRESS IN LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS [J].

SUN, RC ;

TISONE, TC ;

CRUZAN, PD .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :112-117

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