A 3-DIMENSIONAL CMOS DESIGN METHODOLOGY

被引:4
作者
HOEFFLINGER, B
LIU, ST
VAJDIC, B
机构
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
[2] HONEYWELL INC,CTR CORP TECHNOL,BLOOMINGTON,MN 55420
关键词
D O I
10.1109/JSSC.1984.1052082
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:37 / 39
页数:3
相关论文
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    COLINGE, JP
    DEMOULIN, E
    LOBET, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589
  • [2] ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICON
    GIBBONS, JF
    LEE, KF
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 117 - 118
  • [3] Goeloe G. T., 1981, International Electron Devices Meeting, P554
  • [4] LIU ST, 1983, P UGIM 83 S, P76