COMPOSITION-MODULATED STRUCTURES IN INGAASP AND INGAP LIQUID-PHASE EPITAXIAL LAYERS GROWN ON (001) GAAS SUBSTRATES

被引：55

作者：

UEDA, O

ISOZUMI, S

KOMIYA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 04期

关键词：

D O I：

10.1143/JJAP.23.L241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L241 / L243

页数：3

共 19 条

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