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- [2] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387ALLEN, REDOW, JD
- [3] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS[J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426ALLEN, REDOW, JD
- [4] PHOTOELECTRIC EMISSION AND CONTACT POTENTIALS OF SEMICONDUCTORS[J]. PHYSICAL REVIEW, 1948, 74 (10): : 1462 - 1474APKER, LTAFT, EDICKEY, J
- [5] CHEMISORPTION OF OXYGEN AT CLEAVED GAAS(110) SURFACES - PHOTON STIMULATION AND CHEMISORPTION STATES[J]. SURFACE SCIENCE, 1984, 143 (2-3) : 315 - 341BARTELS, FMONCH, W
- [6] OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110)[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 756 - 762BARTELS, FSURKAMP, LCLEMENS, HJMONCH, W
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- [8] PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP[J]. SURFACE SCIENCE, 1979, 88 (2-3) : 439 - 460CHYE, PWSU, CYLINDAU, IGARNER, CMPIANETTA, PSPICER, WE
- [9] AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION[J]. THIN SOLID FILMS, 1980, 70 (02) : 261 - 283CLARK, DTFOK, TROBERTS, GGSYKES, RW
- [10] RELATION BETWEEN THE COMMON ANION RULE AND THE DEFECT MODEL OF SCHOTTKY-BARRIER FORMATION[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 205 - 208DAW, MSSMITH, DL