HYDROGEN INDUCED INTERFACIAL POLARIZATION AT PD-SIO2 INTERFACES

被引：37

作者：

LUNDSTROM, I ^{[1
]}

DISTEFANO, T ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0039-6028(76)90288-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：23 / 32

页数：10

共 12 条

[1] BOND CG, 1962, CATALYSIS METALS
[2] DISTEFANO TH, TO BE PUBLISHED
[3] HORIUTI J, 1969, SOLID STATE SURFACE, V1
[4] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR
LUNDSTROEM, I
SHIVARAMAN, S
SVENSSON, C
LUNDKVIST, L
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 55 - 57
[5] LUNDSTROM I, 1975, J APPL PHYS, V46, P3876
[6] LUNDSTROM I, 1975, HYDROGEN SENSITIVE M, P631
[7] LUNDSTROM I, TO BE PUBLISHED
[8] HYDROGEN LEAK DETECTOR USING A PD-GATE MOS-TRANSISTOR
STIBLERT, L
SVENSSON, C
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (09) : 1206 - 1208
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[10] Thomas JM., 1967, INTRO PRINCIPLES HET