PHOTOCONDUCTOR RECEIVER SENSITIVITY

[1] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1431 - 1441

[2] Campbell J. C., 1983, International Electron Devices Meeting 1983. Technical Digest, P464

[3] CHEN CY, 1984, 7TH TOP M INT GUID W

[4] SOLID-STATE PHOTODETECTION - COMPARISON BETWEEN PHOTODIODES + PHOTOCONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (02) : 136 - &

[5] EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES [J]. ELECTRONICS LETTERS, 1981, 17 (24) : 917 - 919

[6] MARSH JH, 1981, I PHYS C SER, V56, P621

[7] Ohno H., 1980, International Electron Devices Meeting. Technical Digest, P434

[8] EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTO-DIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J]. ELECTRONICS LETTERS, 1982, 18 (11) : 453 - 454

[9] SMITH RG, 1979, SEMICONDUCTOR DEVICE

[1] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1431 - 1441

[2] Campbell J. C., 1983, International Electron Devices Meeting 1983. Technical Digest, P464

[3] CHEN CY, 1984, 7TH TOP M INT GUID W

[4] SOLID-STATE PHOTODETECTION - COMPARISON BETWEEN PHOTODIODES + PHOTOCONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (02) : 136 - &

[5] EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES [J]. ELECTRONICS LETTERS, 1981, 17 (24) : 917 - 919

[6] MARSH JH, 1981, I PHYS C SER, V56, P621

[7] Ohno H., 1980, International Electron Devices Meeting. Technical Digest, P434

[8] EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTO-DIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J]. ELECTRONICS LETTERS, 1982, 18 (11) : 453 - 454

[9] SMITH RG, 1979, SEMICONDUCTOR DEVICE