INVESTIGATION OF KINETIC MECHANISM FOR THE ION-ASSISTED ETCHING OF SI IN CL2

被引：62

作者：

MCNEVIN, SC

BECKER, GE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：485 / 491

页数：7

共 17 条

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