PROPERTIES OF (211)B HGTE-CDTE SUPERLATTICES GROWN BY PHOTON ASSISTED MOLECULAR-BEAM EPITAXY

被引：12

作者：

HARRIS, KA ^{[1
]}

YANKA, RW ^{[1
]}

MOHNKERN, LM ^{[1
]}

REISINGER, AR ^{[1
]}

MYERS, TH ^{[1
]}

YANG, Z ^{[1
]}

YU, Z ^{[1
]}

HWANG, S ^{[1
]}

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of detailed optical, electrical, and structural studies performed on a series of (211)B oriented HgTe-CdTe superlattices grown by photon assisted molecular-beam epitaxy are reported. Higher order optical transitions in infrared (IR) photoluminescence (PL) spectra were observed for the first time in HgTe-CdTe superlattices. Low residual carrier concentrations were measured in undoped superlattices. Acceptor-bound excitonic transitions were observed in IR PL spectra of an arsenic doped superlattice for the first time. Excess carrier lifetimes of several hundred nanoseconds were measured, approaching that observed in the corresponding alloy. These results represent significant improvement in the electrical quality of HgTe-CdTe superlattices, and is another step towards the realization of a superlattice-based IR device technology.

引用

页码：1574 / 1581

页数：8

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