RADIATION RESPONSE OF SILICON ON DIAMOND (SOD) DEVICES

被引：32

作者：

ANNAMALAI, NK

SAWYER, J

KARULKAR, P

MASZARA, W

LANDSTRASS, M

机构：

[1] NORTHEASTERN UNIV,BOSTON,MA 02115

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[3] ALLIED SIGNAL AEROSP CO,COLUMBIA,MD 21045

[4] CRYSTALLUME INC,MENLO PK,CA 94025

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field effect transistors ate fabricated on two types of Silicon-On-Diamond (SOD) structures and their radiation response is studied. The results are compared with the radiation response of simultaneously fabricated SIMOX devices. The feasibility of fabricating field effect transistors on SOD structure is demonstrated for the first time and the extreme radiation hardness of such a structure is also verified.

引用

页码：1780 / 1786

页数：7

共 11 条

[1]

ANNAMALAI NK, 1993, Patent No. 5186785

[2] THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION [J].