ELECTRONIC TRANSPORT-PROPERTIES OF AMORPHOUS NITI ALLOYS

被引：8

作者：

LINDQVIST, P ^{[1
]}

KEMPF, A ^{[1
]}

FRITSCH, G ^{[1
]}

机构：

[1] UNIV MUNICH, BAUV 11 PHYS, W-8014 MUNICH, GERMANY

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1992年 / 88卷 / 02期

关键词：

D O I：

10.1007/BF01323567

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Measurements of electrical resistivity, magnetoresistance and Hall effect on amorphous Ni100-xTi(x) alloys with x = 39, 43, 60, 65, 70 and 76 are presented. The resistivity at 4.2 K is in the range 210-mu-OMEGA-cm to 325-mu-OMEGA-cm. The Hall coefficient turns out to be negative for low Ti contents and positive for high Ti contents with values around -6x10(-11) m3/As and +7x10(-11) m3/As, respectively. At low temperatures, the temperature and magnetic field dependences of the quantities measured are analysed and discussed in terms of weak localisation and electron-electron interaction effects.

引用

页码：159 / 167

页数：9

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