OPTICAL-PARAMETERS AND CRYSTALLIZATION OF FLASH EVAPORATED AMORPHOUS GALLIUM ANTIMONIDE FILMS

被引：2

作者：

DASILVA, JHD

CISNEROS, JI

DEOLIVEIRA, CEM

GURAYA, MM

ZAMPIERI, G

机构：

[1] UNICAMP, IFGW, BR-13081 CAMPINAS, SP, BRAZIL

[2] CNEA, CTR ATOM BARILOCHE, RA-8400 BARILOCHE, ARGENTINA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷

关键词：

D O I：

10.1088/0953-8984/5/33A/126

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Flash-evaporated GaSb films are analysed using a combination of optical, surface and x-ray diffraction techniques. The effects of thermal annealings on nearly stoichiometric GaSb films are studied.

引用

页码：A343 / A344

页数：2

共 4 条

[1]

DASILVA JHD, 1991, REV BRAS APLIC VACUO, V10, P63

[2]

Eckenbach W., 1971, Journal of Non-Crystalline Solids, V5, P264, DOI 10.1016/0022-3093(71)90035-4

[3] CHARACTERIZATION OF FLASH-EVAPORATED AMORPHOUS GAAS, GAP AND GASB FILMS AS A FUNCTION OF DEPOSITION CONDITIONS [J].

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RAPPENEAU, T ;

FISSON, S ;

THEYE, ML .

THIN SOLID FILMS, 1984, 120 (03) :191-204

[4] DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE III-V AND II-VI SEMICONDUCTORS [J].

SHEVCHIK, NJ ;

TEJEDA, J ;

CARDONA, M .

PHYSICAL REVIEW B, 1974, 9 (06) :2627-2648

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