RESONANT-TUNNELING INJECTION QUANTUM-WELL LASERS

被引：10

作者：

LUTZ, CR

AGAHI, F

LAU, KM

机构：

[1] Department of Electrical and Computer Engineering, University of Massachusetts, Amherst

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.388735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, the observation of resonant tunneling induced negative differential characteristics in the light-current (L-I) and light-voltage (L-V) curves of a single-quantum-well semiconductor laser. Broad-stripe lasers have exhibited CW threshold current density of 50 A/cm(2) at 77 K, with a sharp decrease in output light power at 68 A/cm(2), which corresponds to a resonant point in the current-voltage (I-V) characteristics of the device. Peak to valley ratios of more than 1.5:1 were observed in the L-I and L-V curves.

引用

页码：596 / 598

页数：3

共 12 条

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