CHARACTERIZATION OF ION-IMPLANTATION THROUGH THIN TI METAL LAYERS ON SI

被引：4

作者：

FATHY, D ^{[1
]}

HOLLAND, OW ^{[1
]}

APPLETON, BR ^{[1
]}

STEPHENSON, TS ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,POB 12889,RES TRIANGLE PK,NC 27709

来源：

MATERIALS LETTERS | 1987年 / 5卷 / 09期

关键词：

ION BEAMS - Applications - SEMICONDUCTOR DEVICES - Junctions - SILICON AND ALLOYS - Heat Treatment - TITANIUM AND ALLOYS - Thin Films;

D O I：

10.1016/0167-577X(87)90119-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion beam mixing of thin Ti films deposited on Si is investigated and its effect during subsequent thermal sintering determined. Both inert (Xe** plus ) and dopant (As** plus ) ions are used to intermix the metal films and Si substrate. The morphology of the silicide layer formed by this process and the structure of the silicide/Si interface is shown to be independent of the specific ions used for mixing. The structural differences observed are correlated to the electrical resistivity of the films. Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) including ion channeling are used to characterize the films.

引用

页码：315 / 321

页数：7

共 13 条

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[2] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].

BUTZ, R ;

RUBLOFF, GW ;

TAN, TY ;

HO, PS .

PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429

[3] FORMATION AND PROPERTIES OF TISI2 FILMS [J].

GULDAN, A ;

SCHILLER, V ;

STEFFEN, A ;

BALK, P .

THIN SOLID FILMS, 1983, 100 (01) :1-7

[4] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI [J].

HUNG, LS ;

GYULAI, J ;

MAYER, JW ;

LAU, SS ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5076-5080

[5] REFRACTORY-METAL SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J].

KWONG, DL ;

MEYERS, DC ;

ALVI, NS ;

LI, LW ;

NORBECK, E .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :688-691

[6]

Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[7] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :342-349

[8] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

APPLETON, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :871-887

[9] INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J].

PRAMANIK, D ;

SAXENA, AN ;

WU, OK ;

PETERSON, GG ;

TANIELIAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :775-780

[10]

TASCH AF, 1983, Patent No. 4384301

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