THE DAMAGE EQUIVALENCE OF ELECTRONS, PROTONS, AND GAMMA-RAYS IN MOS DEVICES

被引：30

作者：

BRUCKER, GJ

STASSINOPOULOS, EG

VANGUNTEN, O

AUGUST, LS

JORDAN, TM

机构：

[1] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1966 / 1969

页数：4

共 10 条

[1] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525

[2] INVERTER HARDNESS PREDICTIONS AND CORRELATION WITH LSI DEVICE FAILURE DOSES [J].

BRUCKER, GJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1700-1703

[3]

BRUCKER GJ, 1981, NASAGSFCX6018136

[4] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J].

CURTIS, OL ;

SROUR, JR ;

CHIU, KY .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4506-4513

[5]

GRISWOLD TW, 1978, GOMAC398 DIG PAP

[6]

JORDAN T, 1982, EMPL82001

[7]

Oldham T.R., 1982, HDLTR1985

[8] IONIZATION OF SIO2 BY HEAVY CHARGED-PARTICLES [J].

OLDHAM, TR ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :3975-3980

[9]

STASSINOPOULOS EG, 1982, UNPUB IEEE T NUCL SC

[10]

STASSINOPOULOS EG, 1981, NASAGSFCX6018137

← 1 →