DEPOSITION OF SILICA FILMS ON GERMANIUM BY CARBON DIOXIDE PROCESS

被引：14

作者：

RAND, MJ

ASHWORTH, JL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 01期

关键词：

D O I：

10.1149/1.2423861

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：48 / &

共 16 条

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[9] ON MECHANISM OF DEPOSITION OF SILICA BY PYROLYTIC DECOMPOSITION OF SILANES [J].

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[10] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].

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